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PD - 91434A
IRF5210
HEXFET(R) Power MOSFET
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated
D
VDSS = -100V RDS(on) = 0.06
G
ID = -40A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Max.
-40 -29 -140 200 1.3 20 780 -21 20 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
0.75 --- 62
Units
C/W
5/13/98
IRF5210
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -100 --- --- -2.0 10 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.11 --- --- --- --- --- --- --- --- --- --- 17 86 79 81 4.5 7.5 2700 790 450 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.06 VGS = -10V, ID = -24A -4.0 V VDS = VGS, ID = -250A --- S VDS = -50V, ID = -21A -25 VDS = -100V, VGS = 0V A -250 VDS = -80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 180 ID = -21A 25 nC VDS = -80V 97 VGS = -10V, See Fig. 6 and 13 --- VDD = -50V --- ID = -21A ns --- RG = 2.5 --- RD = 2.4, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- -40 showing the A G integral reverse --- --- -140 p-n junction diode. S --- --- -1.6 V TJ = 25C, I S = -21A, V GS = 0V --- 170 260 ns TJ = 25C, IF = -21A --- 1.2 1.8 C di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) VDD = -25V, starting TJ = 25C, L = 3.5mH RG = 25, IAS = -21A. (See Figure 12)
ISD -21A, di/dt -480A/s, VDD V(BR)DSS, Pulse width 300s; duty cycle 2%.
TJ 175C
IRF5210
1000
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOT TOM - 4.5V TO P
1000
-ID , D rain-to-S ou rc e C urre nt (A )
-ID , D rain-to-S ource C urrent (A )
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP
100
100
10
10
-4 .5V 4 0 s P U LS E W ID T H T C = 1 75 C
0.1 1 10
1 0.1 1
-4.5 V 4 0 s P U LS E W ID TH T c = 2 5C A
10 100
1
A
100
-VD S , D rain-to-S ourc e V oltage (V )
-VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
R D S (on ) , D rain-to-S ource O n R esistance (N orm alized)
I D = -35 A
-I D , D rain-to-S ource C urrent (A)
2.5
100
T J = 2 5 C T J = 1 7 5 C
2.0
1.5
10
1.0
0.5
1 4 5 6 7
V D S = -5 0 V 4 0 s P U L S E W ID T H
8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
VG S = -1 0V
100 120 140 160 180
A
-VG S , G a te -to -S o u rc e V o lta g e (V )
T J , Junction T em perature (C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRF5210
6000
5000
-V G S , G ate-to-S ource V oltage (V )
C iss
V GS C iss C rs s C o ss
= = = =
0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d
20
I D = -2 1A V D S = -80 V V D S = -50 V V D S = -20 V
16
C , Capacitance (pF)
4000
C oss
3000
12
C rss
2000
8
4
1000
0 1 10 100
A
0 0 40 80
FO R TE S T CIR C U IT S E E FIG U R E 1 3
120 160
A
200
-VD S , D rain-to-S ourc e V oltage (V )
Q G , Total G ate C harge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
-IS D , R everse Drain C urrent (A )
O P E R A T IO N IN T H IS A R E A L IM ITE D B Y R D S (o n)
-I D , D rain C urrent (A )
100
100
10 s
TJ = 1 75 C T J = 2 5C
10
100s
10
1m s
1 0.4 0.8 1.2 1.6
V G S = 0V
2.0
A
1 1
T C = 25 C T J = 17 5C S ing le P u lse
10
10m s
A
100 1000
2.4
-VS D , S ourc e-to-D rain V oltage (V )
-VD S , D rain-to-S ourc e V oltage (V )
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRF5210
VDS
50
RD
VGS RG
40
D.U.T.
+
-ID , Drain Current (A)
-10V
30
Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
10
VGS 10%
0 25 50 75 100 125 150 175
90% VDS
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
1
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
D = 0.50
0.20 0.1
0.10 0.05 0.02 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
-
VDD
IRF5210
VDS L 2000
E A S , S ingle Pulse Avalanc he E nergy (m J)
TOP
1600
RG
D .U .T IA S D R IV E R
0 .0 1
VD D A
B O T TO M
ID -8 .6A -1 5A -21 A
-2 0 V tp
1200
15V
800
Fig 12a. Unclamped Inductive Test Circuit
IAS
400
0 25 50 75 100 125 150
A
175
S tarting T J , J unc tion T em perature (C )
tp V (BR)DSS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
-10V
QGS VG QGD
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
+
D.U.T.
-
VDS
IRF5210
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
+
-
+
RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS
IRF5210
Package Outline
TO-220AB Outline Dimensions are shown in millimeters (inches)
10 .54 (.4 15) 10 .29 (.4 05) 3 .7 8 (.149 ) 3 .5 4 (.139 ) -A 6.47 (.25 5) 6.10 (.24 0) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8)
2.87 (.11 3) 2.62 (.10 3)
4 1 5.24 (.60 0) 1 4.84 (.58 4)
1.15 (.04 5) M IN 1 2 3
L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN
1 4.09 (.55 5) 1 3.47 (.53 0)
4.06 (.16 0) 3.55 (.14 0)
3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 )
0.93 (.03 7) 0.69 (.02 7) M BAM
3X
0.55 (.02 2) 0.46 (.01 8)
0 .3 6 (.01 4)
2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H
2 .92 (.11 5) 2 .64 (.10 4)
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
Part Marking Information
TO-220AB
EXAMP : TH IS N 1 0 1 0 E X A M P L E :L ETH IS IS A N AIR F IR F1 0 1 0 W H ASSEMB W ITH ITA S S E M B L Y L Y L C CO 9B 9B L O T O TO D E D E 1M 1 M
A A
IN TE R N A N A N IN TE R N A T IO TIOL A L R E C TIF R E C TIFIE R IE R IR F IR F 10 1 0 1 0 10 L LOG OGO 9 2 49 2 4 6 6 9B 9B1 M 1 M ASSEMB ASSEMBLY LY L C CO L OT O T O D E D E
PA N NU MB P A R T R TU M B E R E R
DA C CO D A TE TEO D E D E (Y Y(Y Y W W ) WW) Y Y Y Y Y= A R A R = E YE W = EE W WW = W EWK E K
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/98

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